Science, Space and Technology News 2023
A recent study employs advanced atomic-level computer simulations to predict the formation process of spin defects useful for quantum technologies., led by Giulia Galli, have conducted a computational study predicting the conditions necessary to create specific spin defects in silicon carbide. These findings, detailed in a paper published in, mark a significant step towards establishing the fabrication parameters for spin defects, which hold potential for advancements in quantum technologies.
Galli’s team—including Cunzhi Zhang, a postdoctoral researcher in Galli’s group, and Francois Gygi, a professor of computer science at the University of California, Davis—have combined multiple computational techniques and algorithms to predict the formation of specific spin defects in silicon carbide known as “divacancies”.sitting close together in a silicon carbide solid.
To find a recipe for predicting the formation of particular spin defects, Galli and her team combined several techniques to help them look at the movements of atoms and charges when a defect forms as a function of temperature. “Our combined techniques and multiple simulations revealed to us the specific conditions under which divacancy spin defects can be efficiently and controllably formed in silicon carbide,” Galli says. “In our calculations, we are letting the fundamental physics equations tell us what is happening inside the crystal structure when defects form.
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