Study Suggests Different Reaction Channels for FEBID and FIBID ACS_AMI nanoelectronics spintronics nanofabrication nanoanalysis
By Bhavna KavetiSep 28 2022Reviewed by Susha Cheriyedath, M.Sc. Focused electron beam-induced deposition and focused ion beam-induced deposition are direct-write techniques with advantages in the three-dimensional fabrication of nanostructures. However, only a few reports have discussed the differences between these depositions using the same precursor species.
FIBID deposits resulted in a 90 atom% of metal/metalloid contents with 4)2) precursor, while FEBID deposits with the same precursor provided material with less than 60 atom% of metal/metalloid content. Thus, a dense deposition was obtained using FEBID, which showed electric properties and paramagnetic behavior like granular metal.
Related StoriesAdditionally, nanostructure’s site-selective writing with appropriate form and dimensions is possible via focused electron/ion beams. Hence, these direct-write methods have been developed for direct applications in non-specialist environments. Surface-adsorbed precursors must be fragmented for both FEBID and FIBID writings.
While metal silicides are intermetallic compounds with a wide range of magnetic, electronic, catalytic, optical, and mechanical properties, cobalt silicides are promising materials in nanoelectronics as gates in integrated devices, interconnects, and spintronic applications. However, H2Si4)2 was shown to be a suitable precursor for FIBID due to rapid growth rates with high metal/metalloid concentrations of up to 90 atom% and retention of the metal/metalloid ratio offered by the precursor, while using the same precursor in FEBID-derived material revealed substantial differences in the physical properties and microstructures of the deposits.
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