Recently, the introduction of nonlinear optical functions in integrated optics has sparked significant enthusiasm. Demonstrations have shown the potential for integrated photonic platforms. Furthermore, large-scale manufacturing capability and affordability have motivated the development of fully integrated, nonlinear optical devices, aiming at various applications, such as all on-chip spectroscopy, on-chip quantum computations and communications, efficient multiplexing for data communications, on-chip metrology, bio-sensing, or LIDARs.
a team of scientists led by Professors Vincent Pelgrin and Zhipei Sun reviewed the range of hybrid photonic integration structures.has attracted much attention. The possible compatibility with CMOS processes and the overall low cost of the platform make it very attractive to the industry, with devices directly suitable for dense optical circuit fabrication.
Si is highly nonlinear in the C-band range but suffers from two photons absorption due to its low bandgap. Unfortunately, most classical materials compatible with silicon integration lack strength in terms of optical nonlinearities. The stochiometric SiN nonlinear refractive index is almost two orders of magnitude lower than Si. The stochiometric SiN nonlinear refractive index is nearly two orders of magnitude lower than Si.
Alternatively, materials such as Si-rich waveguides or using p-i-n junctions to engineer carrier density have shown some promising results. However, there are some drawbacks. Si-rich waveguides still present TPA. At the same time, using multiple p-i-n junctions adds another layer of complexity to devices and circuits. Hence, the need for solutions to this limitation is still strong.
Chalcogenides are a popular alternative to Si-based materials. In the quest to identify disrupting nonlinear optical materials, two-dimensional layered materials have been identified as extremely promising. These materials have third-order susceptibility up to two orders of magnitude higher than Si.
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